general purpose amplifier transistor npn silicon surface mount this npn silicon epitaxial planar transistor is designed for general purpose amplifier applications. th is device is housed in the sc-70/sot-323 package which is designed for low power surface mount applications. features ? high h fe , 210?460 ? low v ce(sat) , < 0.5 v ? moisture sensitivity level 1 ? esd protection: human body model > 4000 v machine model > 400 v ? maximum ratings (t a = 25 c) rating symbol value unit collector-base voltage v (br)cbo 60 vdc collector-emitter voltage v (br)ceo 50 vdc emitter-base voltage v (br)ebo 7.0 vdc collector current ? continuous i c 100 madc collector current ? peak i c(p) 200 madc thermal characteristics characteristic symbol max unit power dissipation (note 1) p d 150 mw junction temperature t j 150 c storage temperature range t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. leshan radio company, ltd. 1 3 2 LMSD1819A-RT1G sc-70/sot?323 2 emitter 3 collector 1 base device marking shipping LMSD1819A-RT1G zr 3000/tape&reel LMSD1819A-RT1G zr 10000/tape&reel ordering information rohs requirements. we declare that the material of product compliance with rev.o 1/4
electrical characteristics characteristic symbol min max unit collector-emitter breakdown voltage (i c = 2.0 madc, i b = 0) v (br)ceo 50 ? vdc collector-base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 ? vdc emitter-base breakdown voltage (i e = 10 adc, i e = 0) v (br)ebo 7.0 ? vdc collector-base cutoff current (v cb = 20 vdc, i e = 0) i cbo ? 0.1 a collector-emitter cutoff current (v ce = 10 vdc, i b = 0) i ceo ? 0.1 a dc current gain (note 2) (v ce = 10 vdc, i c = 2.0 madc) (v ce = 2.0 vdc, i c = 100 madc) h fe1 h fe2 210 90 340 ? ? collector-emitter saturation voltage (note 2) (i c = 100 madc, i b = 10 madc) v ce(sat) ? 0.5 vdc 2. pulse test: pulse width 300 s, d.c. 2%. figure 1. derating curve 250 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) p d , p o wer di ss ipati o n ( milliwatt s) figure 2. i c ? v ce v ce , collector voltage (v) figure 3. dc current gain i c , collector current (ma) figure 4. collector saturation region i b , base current (ma) i c , collector current (ma) 60 0 50 40 30 20 10 0 24 68 t a = 25 c 160 a 140 a 120 a 100 a 80 a 60 a 40 a i b = 20 a d c c urrent g ain 1000 0.1 100 10 1 10 100 t a = 25 c t a = ? 25 c t a = 75 c v ce = 10 v v ce , collector-emitter voltage (v) 2 0.01 1.5 1 0.5 0 0.1 1 10 100 t a = 25 c r ja = 833 c/w leshan radio company, ltd. LMSD1819A-RT1G rev.o 2/4
figure 5. on voltage i c , collector current (ma) collector voltage (mv) 900 0.2 800 700 600 500 400 300 200 100 0.5 1 5 10 20 40 60 80 100 150 200 t a = 25 c v ce = 5 v 0 figure 6. capacitance v eb (v) 20 0 18 16 14 12 10 1234 c ib , input capacitance (pf) v cb (v) figure 7. capacitance 7 0 6 5 4 3 2 1 10 20 30 40 c ob , capacitance (pf) leshan radio company, ltd. LMSD1819A-RT1G rev.o 3/4
sc?70 (sot?323) style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref leshan radio company, ltd. LMSD1819A-RT1G rev.o 4/4
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